MOCVD Growth of InN on Si(111) with Various Buffer Layers

被引：0

作者：

C.C. Huang

R.W. Chuang

S.J. Chang

J.C. Lin

Y.C. Cheng

W.J. Lin

机构：

[1] National Cheng Kung University,Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center

[2] Chung Shan Institute of Science and Technology,Materials and Electro

来源：

Journal of Electronic Materials | 2008年 / 37卷

关键词：

InN; MOCVD; buffer layer; XRD; mobility;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded AlxGa1−xN (x = 1 → 0), and a high-temperature GaN. The resultant mobility of 275 cm2/V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.

引用

页码：1054 / 1057

页数：3

共 50 条

[1] MOCVD growth of InN on Si(111) with various buffer layers
Huang, C. C.
Chuang, R. W.
Chang, S. J.
Lin, J. C.
Cheng, Y. C.
Lin, W. J.
JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (08) : 1054 - 1057
[2] In situ stress measurements during the MOCVD growth of AlN buffer layers on (111)Si substrates
Raghavan, S
Redwing, JM
JOURNAL OF CRYSTAL GROWTH, 2004, 261 (2-3) : 294 - 300
[3] Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer
Valdueza-Felip, S.
Ibanez, J.
Monroy, E.
Gonzalez-Herraez, M.
Artus, L.
Naranjo, F. B.
THIN SOLID FILMS, 2012, 520 (07) : 2805 - 2809
[4] MOCVD growth of InN using a GaN buffer
Wang, L. L.
Wang, H.
Chen, J.
Sun, X.
Zhu, J. J.
Jiang, D. S.
Yang, H.
Liang, J. W.
SUPERLATTICES AND MICROSTRUCTURES, 2008, 43 (02) : 81 - 85
[5] Investigation of the influence of buffer and nitrided layers on the initial stages of InN growth on sapphire by MOCVD
Maleyre, B
Ruffenach, S
Briot, O
Gil, B
van der Lee, A
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2309 - 2315
[6] Epitaxial growth of Al on Si(111) with Cu buffer layers
Baeza, PA
Pedersen, K
Rafaelsen, J
Pedersen, TG
Morgen, P
Li, Z
SURFACE SCIENCE, 2006, 600 (03) : 610 - 616
[7] MOVPE growth of InN buffer layers on sapphire
Briot, O.
Ruffenach, S.
Moret, M.
Gil, B.
Giesen, Ch.
Heuken, M.
Rushworth, S.
Leese, T.
Succi, M.
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) : 2787 - 2790
[8] Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology
Bi, Zhaoxia
JOURNAL OF CRYSTAL GROWTH, 2007, 300 (01) : 123 - 126
[9] Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN/AlN double-buffer layers
Li, Zhen-Yu
Lan, Shan-Ming
Uen, Wu-Yih
Chen, Ying-Ru
Chen, Meng-Chu
Huang, Yu-Hsiang
Ku, Chien-Te
Liao, Sen-Mao
Yang, Tsun-Neng
Wang, Shing-Chung
Chi, Gou-Chung
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (04): : 587 - 591
[10] A study on growth characteristics of GaN layers grown by MOCVD on Si(111) substrate
Shin, HY
Yang, CW
Jung, SH
Yoo, JB
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S403 - S407

← 1 2 3 4 5 →