Electrical properties of anisotype n-TiN/p-Hg3In2Te6 heterojunctions

被引：0
作者：
M. M. Solovan
E. V. Maistruk
V. V. Brus
P. D. Maryanchuk
机构：
[1] Yuriy Fedkovych Chernivtsi National University,
来源：
Technical Physics Letters | 2014年 / 40卷
关键词：
Technical Physic Letter; Titanium Nitride; Reactive Magnetron; Potential Barrier Height; Short Circuit Current Density;
D O I：
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摘要：
Photosensitive anisotype n-TiN/p-Hg3In2Te6 heterojunctions have been obtained by reactive magnetron sputtering of thin n-type titanium nitride (TiN) films onto single-crystalline plates of p-type Hg3In2Te6. It is established that the obtained heterostructures generate an open-circuit voltage of Voc = 0.52 V and a short-circuit current density of Isc = 0.265 mA/cm2 with a filling factor of FF = 0.39 under illumination at a power density of 80 mW/cm2.
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页码：231 / 233
页数：2
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