Method for Determining the Etching Rate in Phosphate Glass Detectors

被引：0
|
作者：
N. Burtebayev
K. Argynova
M. M. Chernyavskiy
A. A. Gippius
G. V. Kalinina
N. S. Konovalova
T. N. Kvochkina
M. Nassurlla
N. M. Okateva
A. N. Pan
N. G. Polukhina
Zh. T. Sadykov
T. V. Shchedrina
N. I. Starkov
E. N. Starkova
I. I. Zasavitskii
机构：
[1] Institute of Nuclear Physics,
[2] Al-Farabi Kazakh National University,undefined
[3] Satbayev University,undefined
[4] Institute of Physics and Technology,undefined
[5] Lebedev Physical Institute,undefined
[6] Russian Academy of Sciences,undefined
[7] National University of Science and Technology MISiS,undefined
来源：
Bulletin of the Lebedev Physics Institute | 2022年 / 49卷
关键词：
accelerated heavy ions; phosphate glass detectors; etching rate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：350 / 355
页数：5
相关论文
共 34 条
  • [21] Effect of oxygen fugacity on the etching rate of diamond crystals in silicate melt
    V. M. Sonin
    E. I. Zhimulev
    I. I. Fedorov
    A. I. Chepurov
    Geology of Ore Deposits, 2006, 48 : 499 - 501
  • [22] Improving the etching performance of high-aspect-ratio contacts by wafer temperature control Uniform temperature design and etching rate enhancement
    Tandou, Takumi
    Kubo, Seiji
    Yokogawa, Ken'etsu
    Negishi, Nobuyuki
    Izawa, Masaru
    PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY, 2016, 44 : 87 - 92
  • [23] Ratio measurement of reactive ion beam etching rate using optical interferometry
    Da-wei, Zhang
    Yuan-shen, Huang
    Zheng-ji, Ni
    Song-lin, Zhuang
    3RD INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTICAL TEST AND MEASUREMENT TECHNOLOGY AND EQUIPMENT, PARTS 1-3, 2007, 6723
  • [24] Reactive Ion Etching Optimization Method Based on Orthogonal Experiment
    Wang Xiaoguang
    Qi Hong
    Zhang Yan
    PROCEEDINGS OF 2013 IEEE 11TH INTERNATIONAL CONFERENCE ON ELECTRONIC MEASUREMENT & INSTRUMENTS (ICEMI), 2013, : 700 - 703
  • [25] High-speed flattening of crystallized glass substrates by dressed-photon–phonon etching
    W. Nomura
    T. Yatsui
    T. Kawazoe
    N. Tate
    M. Ohtsu
    Applied Physics A, 2015, 121 : 1403 - 1407
  • [26] Preparation and etching processing of planar thin film of Pr3+-doped fluorozirconate glass
    Y. Kawamoto
    M. Teramoto
    T. Hatano
    M. Shojiya
    Journal of Materials Science, 2001, 36 : 5013 - 5016
  • [27] Rate controlled metal assisted chemical etching to fabricate vertical and uniform Si nanowires
    Song, Ari
    Yun, Seokhun
    Lokhande, Vaibhav
    Ji, Taeksoo
    ADVANCED FABRICATION TECHNOLOGIES FOR MICRO/NANO OPTICS AND PHOTONICS IX, 2016, 9759
  • [28] Reactive ion etching of Ge-Sb-Se ternary chalcogenide glass films in fluorine plasma
    Xiong, Hao
    Shi, Yunfan
    Wang, Zheyao
    MICROELECTRONIC ENGINEERING, 2020, 225
  • [29] Spray etching rate development of stainless steel in the etchant for printed circuit heat exchanger channels
    Xin, Fei
    Ma, Ting
    Wang, Qiuwang
    8TH INTERNATIONAL CONFERENCE ON APPLIED ENERGY (ICAE2016), 2017, 105
  • [30] Influence of uranium enrichment on the etching rate of polycarbonate fission track detector containing uranium particles
    Lee, CG
    Iguchi, K
    Esaka, F
    Magara, M
    Sakurai, S
    Watanabe, K
    Usuda, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 245 (02) : 440 - 444
1234