Effect of oxidation on IR absorption spectra of silicon

被引：0
作者：
E. V. Sokolenko
E. P. Kuznechenkov
机构：
[1] North Caucasus State Technical University,
来源：
Inorganic Materials | 2015年 / 51卷
关键词：
Porous Silicon; Silicon Cluster; Transverse Optical; Indirect Electronic Transition; Surface Silicon Oxide Layer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Infrared absorption spectra of clusters are calculated by a semiempirical method (with PM3 parameterization), and the effect of oxidation on the position and strength of absorption bands is examined.
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页码：413 / 418
页数：5
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