Stepwise dependence of the photoconductivity of Si/Ge structures with quantum dots on the interband illumination intensity

被引：0

作者：

O. A. Shegai

V. A. Markov

A. I. Nikiforov

机构：

[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division

来源：

Physics of the Solid State | 2004年 / 46卷

关键词：

Spectroscopy; Silicon; State Physics; Light Intensity; Germanium;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

It was found that a stepwise increase in the interband light intensity causes an increase in the low-temperature lateral photoconductivity of a Si/Ge structure containing six layers of germanium quantum dots in a silicon host. As was previously observed in structures with a single layer of quantum dots, strengthening of the driving field results in the step positions shifting to lower light intensities. This effect was also found to take place under a dark driving field. The results are discussed in terms of the percolation theory of nonequilibrium electrons localized in the states between quantum dots.

引用

页码：74 / 76

页数：2

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