Stepwise dependence of the photoconductivity of Si/Ge structures with quantum dots on the interband illumination intensity

被引：0
|
作者：
O. A. Shegai
V. A. Markov
A. I. Nikiforov
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
来源：
Physics of the Solid State | 2004年 / 46卷
关键词：
Spectroscopy; Silicon; State Physics; Light Intensity; Germanium;
D O I：
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学科分类号：
摘要：
It was found that a stepwise increase in the interband light intensity causes an increase in the low-temperature lateral photoconductivity of a Si/Ge structure containing six layers of germanium quantum dots in a silicon host. As was previously observed in structures with a single layer of quantum dots, strengthening of the driving field results in the step positions shifting to lower light intensities. This effect was also found to take place under a dark driving field. The results are discussed in terms of the percolation theory of nonequilibrium electrons localized in the states between quantum dots.
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页码：74 / 76
页数：2
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