Generation-Recombination Noise: The Fundamental Sensitivity Limit for Kinetic Inductance Detectors

被引:0
|
作者
P. J. de Visser
J. J. A. Baselmans
P. Diener
S. J. C. Yates
A. Endo
T. M. Klapwijk
机构
[1] Netherlands Institute for Space Research,SRON
[2] Delft University of Technology,Physics of NanoElectronics Group, Kavli Institute of Nanoscience, Faculty of Applied Sciences
来源
关键词
Kinetic inductance detector; Generation-recombination noise;
D O I
暂无
中图分类号
学科分类号
摘要
We present measurements of quasiparticle generation-recombination noise in aluminium Microwave Kinetic Inductance Detectors, the fundamental noise source for these detectors. Both the quasiparticle lifetime and the number of quasiparticles can be determined from the noise spectra. The number of quasiparticles saturates to 10 μm−3 at temperatures below 160 mK, which is shown to limit the quasiparticle lifetime to 4 ms. These numbers lead to a generation-recombination noise limited noise equivalent power (NEP) of 1.5×10−19 W/Hz1/2. Since NEP∝Nqp, lowering the number of remnant quasiparticles will be crucial to improve the sensitivity of these detectors. We show that the readout power now limits the number of quasiparticles and thereby the sensitivity.
引用
收藏
页码:335 / 340
页数:5
相关论文
共 50 条
  • [21] GENERATION-RECOMBINATION NOISE IN WEAK ELECTROLYTES
    FLEISCHMANN, M
    OLDFIELD, JW
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1970, 27 (02) : 207 - +
  • [22] Generation-recombination noise in bipolar transistors
    Dai, YS
    MICROELECTRONICS RELIABILITY, 2001, 41 (06) : 919 - 925
  • [23] PHOTOCONDUCTIVE GAIN AND GENERATION-RECOMBINATION NOISE IN MULTIPLE-QUANTUM-WELL INFRARED DETECTORS
    BECK, WA
    APPLIED PHYSICS LETTERS, 1993, 63 (26) : 3589 - 3591
  • [24] CONCERNING THE THEORY OF GENERATION-RECOMBINATION NOISE IN SOLIDS
    VANVLIET, KM
    PHYSICS LETTERS, 1964, 8 (01): : 22 - 24
  • [25] THEORY OF GENERATION-RECOMBINATION NOISE IN INTRINSIC PHOTOCONDUCTORS
    SMITH, DL
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7051 - 7060
  • [26] Generation-recombination noise in advanced CMOS devices
    Simoen, E.
    Oliveira, A. V.
    Boudier, D.
    Mitard, J.
    Witters, L.
    Veloso, A.
    Agopian, P. G. D.
    Martino, J. A.
    Carin, R.
    Cretu, B.
    Langer, R.
    Collaert, N.
    Thean, A.
    Claeys, C.
    SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 14, 2016, 75 (05): : 111 - 120
  • [28] CONCERNING THEORY OF GENERATION-RECOMBINATION NOISE IN SEMICONDUCTORS
    BONCH-BRUEVICH, VL
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (07): : 1728 - +
  • [29] Noise and sensitivity of aluminum kinetic inductance detectors for sub-mm astronomy
    Baselmans, J.
    Yates, S. J. C.
    Barends, R.
    Lankwarden, Y. J. Y.
    Gao, J. R.
    Hoevers, H.
    Klapwijk, T. M.
    JOURNAL OF LOW TEMPERATURE PHYSICS, 2008, 151 (1-2) : 524 - 529
  • [30] Photon-noise limited sensitivity in titanium nitride kinetic inductance detectors
    Hubmayr, J.
    Beall, J.
    Becker, D.
    Cho, H-M
    Devlin, M.
    Dober, B.
    Groppi, C.
    Hilton, G. C.
    Irwin, K. D.
    Li, D.
    Mauskopf, P.
    Pappas, D. P.
    Van Lanen, J.
    Vissers, M. R.
    Wang, Y.
    Wei, L. F.
    Gao, J.
    APPLIED PHYSICS LETTERS, 2015, 106 (07)