A tight-binding representation of electron-hole exchange interaction in semiconductors

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作者
S. V. Goupalov
E. L. Ivchenko
机构
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] Washington State University,Department of Physics
[3] Georgia Institute of Technology,School of Electrical and Computer Engineering
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Spectroscopy; State Physics; Exchange Interaction; Semiconductor Compound; Exchange Splitting;
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摘要
The electron-hole exchange interaction in semiconductors is analyzed in the framework of the empirical tight-binding method. It is demonstrated that intra-atomic and interatomic contributions to the long-range exchange interaction enter in an inequivalent way. In particular, for the Γ6×Γ7 exciton in a spherical nanocrystal with a cubic lattice, the dipole-dipole contribution associated only with the intra-atomic (or intra-site) transitions does not lead to singlet-triplet splitting of the exciton level. The interatomic transitions, for example, anion-to-cation transitions between the nearest neighbors in binary semiconductor compounds, determine the so-called monopole-monopole contribution to the exchange splitting of the Γ6×Γ7 exciton, and this contribution does not vanish in a spherical nanocrystal.
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页码:1867 / 1875
页数:8
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