Long-lived excited state of Te donors in GaP

被引：0
|
作者：
Ya. E. Pokrovskii
O. I. Smirnova
N. A. Khval’kovskii
机构：
[1] Russian Academy of Sciences,Institute of Radio Engineering and Electronics
来源：
Journal of Experimental and Theoretical Physics | 1998年 / 87卷
关键词：
Radiation; Spectroscopy; Microwave; State Physics; Field Theory;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The kinetics of the photoresponses in constant and microwave electric fields and the variation of the absorption of background radiation in GaP doped with Te (2×1017 cm−3) upon impurity excitation at 5–50 K are investigated. The lifetime of the excited state of the Te donors is determined (∼10−2 s). It is shown that the results presented are consistent with the model of carrier accumulation in long-lived impurity excited states in semiconductors. These results are compared with the results previously obtained for diamond-structure semiconductors.
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页码：1201 / 1204
页数：3
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