Long-lived excited state of Te donors in GaP

被引：0

作者：

Ya. E. Pokrovskii

O. I. Smirnova

N. A. Khval’kovskii

机构：

[1] Russian Academy of Sciences,Institute of Radio Engineering and Electronics

来源：

Journal of Experimental and Theoretical Physics | 1998年 / 87卷

关键词：

Radiation; Spectroscopy; Microwave; State Physics; Field Theory;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The kinetics of the photoresponses in constant and microwave electric fields and the variation of the absorption of background radiation in GaP doped with Te (2×1017 cm−3) upon impurity excitation at 5–50 K are investigated. The lifetime of the excited state of the Te donors is determined (∼10−2 s). It is shown that the results presented are consistent with the model of carrier accumulation in long-lived impurity excited states in semiconductors. These results are compared with the results previously obtained for diamond-structure semiconductors.

引用

页码：1201 / 1204

页数：3

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