Application of High Pressure-DTA for High Pressure-liquid Phase Epitaxy of Doped Mercury and Thallium HTS Formations

The fabrication method of superconducting thin films of compositions HgBa2Ca2Cu3O8+δ (Hg-1223) and Tl2Ba2CuOy (2201) on single-crystalline SrTiO3 and LaAlO3 substrates is reported. The highest obtained Tc was 134 K and Jc over 106 A cm–2 at 77 K. High pressure DTA(HP-DTA) was applied to grow mercury- and thallium-based high-temperature superconducting crystals and thin films, to identify melting points of particular phases within these oxide systems and determine suitable processing conditions. The DTA system operates at the: maximum temperature of 1200°C, volume up to 5 cm3, working pressure up to 1.5 GPa and at a working atmosphere — inert gas with up to 25% oxygen.