Study of rectifying and photoelectric properties of barrier structures based on vanadium-doped cadmium telluride

被引：0

作者：

S. Yu. Paranchych

L. D. Paranchych

V. N. Makogonenko

Yu. V. Tanasyuk

R. N. Yurtsenyuk

机构：

[1] Fed’kovich National University,

来源：

Technical Physics | 2003年 / 48卷

关键词：

Evaporation; Chromium; Cadmium; Vanadium; Spectral Characteristic;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Structures similar to Schottky diodes are prepared by the thermal evaporation of chromium on high-resistivity cadmium telluride substrates doped by vanadium (CdTe: V) to a concentration of 5×1018 cm−3. The current-voltage and spectral characteristics of the Cr/CdTe: V barrier structures are studied, and their rectifying properties are evaluated.

引用

页码：641 / 643

页数：2