Study of rectifying and photoelectric properties of barrier structures based on vanadium-doped cadmium telluride

被引：0
作者：
S. Yu. Paranchych
L. D. Paranchych
V. N. Makogonenko
Yu. V. Tanasyuk
R. N. Yurtsenyuk
机构：
[1] Fed’kovich National University,
来源：
Technical Physics | 2003年 / 48卷
关键词：
Evaporation; Chromium; Cadmium; Vanadium; Spectral Characteristic;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Structures similar to Schottky diodes are prepared by the thermal evaporation of chromium on high-resistivity cadmium telluride substrates doped by vanadium (CdTe: V) to a concentration of 5×1018 cm−3. The current-voltage and spectral characteristics of the Cr/CdTe: V barrier structures are studied, and their rectifying properties are evaluated.
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页码：641 / 643
页数：2
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