Electromigration and thermomigration behavior of flip chip solder joints in high current density packages

被引：0
作者：
Yang D. [1 ]
Chan Y.C. [1 ]
Wu B.Y. [1 ]
Pecht M. [2 ]
机构：
[1] Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong
[2] Center for Advanced Life Cycle Engineering (CALCE), University of Maryland, College Park
来源：
Journal of Materials Research | 2008年 / 23卷 / 9期
关键词：
D O I：
10.1557/jmr.2008.0305
中图分类号：
学科分类号：
摘要：
The electromigration and thermomigration behavior of eutectic tin-lead flip chip solder joints, subjected to currents ranging from 1.6 to 2.0 A, at ambient temperatures above 100 °C, was experimentally and numerically studied. The temperature at the chip side was monitored using both a temperature coefficient of resistance method and a thermal infrared technique. The electron wind force and thermal gradient played the dominant role in accelerated atomic migration. The atomic flux of lead due to electromigration and thermomigration was estimated for comparison. At the current crowding region, electromigration induced a more serious void accumulation as compared with thermomigration. Also, because of different thermal dissipations, a morphological variation was detected at different cross-sectional planes of the solder joint during thermomigration. © 2008 Materials Research Society.
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页码：2333 / 2339
页数：6
相关论文
共 27 条
  • [11] Yang D., Alam M.O., Wu B.Y., Chan Y.C., Thermomigration in eutectic tin-lead flip chip solder joints, Proceedings of the 8th Electronics Packaging Technology Conference, (2006)
  • [12] Yang D., Wu B.Y., Chan Y.C., Tu K.N., Microstructural evolution and atomic transport by thermomigration in eutectic tin-lead flip chip solder joints, J. Appl. Phys, 102, (2007)
  • [13] Hsiao H.Y., Chen C., Thermomigratioin in flip-chip SnPb solder joints under alternating current stressing, Appl. Phys. Lett, 90, (2007)
  • [14] Ramanathan L.N., Lee T.Y., Jang J.W., Chae S.H., Ho P.S., Current carrying capability of Sn0.7Cu solder bumps in flip chip modules for high-power applications, Proceedings of the 57th Electronics Components and Technology Conference, (2007)
  • [15] Agarwal R., Ou S.Q., Tu K.N., Electromigration and critical product in cutectic SnPb solder lines at 100 °C, J. Appl. Phys, 100, (2006)
  • [16] Nah J.W., Kim J.H., Lee H.M., Paik K.W., Electromigration in flip chip solder bump of 97Pb3Sn/37Pb63Sn combination structure, Acta Mater, 52, (2004)
  • [17] Yoon M.S., Lee S.B., Kim O.H., Park Y.B., Joo Y.C., Relationship between edge drift and atomic migration during electromigration of eutectic SnPb lines, J. Appl. Phys, 100, (2006)
  • [18] Gupta D., Vieregge K., Gust W., Interface diffusion in eutectic Pb-Sn solder, Acta Mater, 47, (1999)
  • [19] Nah J.W., Paik K.W., Suh J.O., Tu K.N., Mechanism of electromigration-induced failure in the 97Pb3Sn and 37Pb63Sn composite solder joints, J. Appl. Phys, 94, (2003)
  • [20] Yeh E.C.C., Choi W.J., Tu K.N., Current-crowding-induced electromigration failure in flip chip solder joints, Appl. Phys. Lett, 80, (2002)
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