Edge photoluminescence of single-crystal silicon at room temperature

被引：0

作者：

E. G. Gule

E. B. Kaganovich

I. M. Kizyak

E. G. Manoilov

S. V. Svechnikov

机构：

[1] National Academy of Sciences of Ukraine,Lashkarev Institute of Semiconductor Physics

来源：

Semiconductors | 2005年 / 39卷

关键词：

Silicon; Magnetic Material; Surface State; Electromagnetism; Edge Emission;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The edge photoluminescence of single-crystal silicon (c-Si) with a peak at ∼1.09 eV at room temperature is observed for structures that consist of nanocrystalline silicon (nc-Si) and c-Si. The structures are obtained by pulsed-laser deposition of an nc-Si film onto a c-Si substrate. The photoluminescence signal increases as both the density of surface states at the nc-Si/c-Si boundary and the scattering of the edge emission from c-Si in the nc-Si film decreases.

引用

页码：406 / 408

页数：2

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