Design and fabrication of AlGaN/GaN high electron mobility transistors for biosensing applications

被引：2
|
作者：
Chinnamuthan Periasamy
Arathy Varghese
机构：
[1] Malaviya National Institute of Technology,Department of Electronics and Communication Engineering
来源：
CSI Transactions on ICT | 2019年 / 7卷 / 3期
关键词：
AlGaN/GaN HEMT; Analytical modeling; Simulation; Fabrication; Sensing; Transconductance; Label free detection;
D O I：
10.1007/s40012-019-00233-y
中图分类号：
学科分类号：
摘要：
Developing and optimizing FET platforms for label free bio molecule detection has gained huge interest in recent years. This paper presents a charge control model based sensitivity analysis of an optimized GaN HEMT for pH and biomarker detection. Analytical modeling, simulation and fabrication of the device have been discussed in this paper with focus on its sensing application. The overall aim is to enhance the sensitivity of AlGaN/GaN HEMT by epitaxial optimization and contact optimizations and deliver a highly efficient end product with desired sensitivity for bio/chemical detection.
引用
收藏
页码：187 / 190
页数：3
相关论文
共 50 条
  • [31] Self-aligned AlGaN/GaN high electron mobility transistors
    Lee, J
    Liu, D
    Kim, H
    Schuette, M
    Flynn, JS
    Brandes, GR
    Lu, W
    ELECTRONICS LETTERS, 2004, 40 (19) : 1227 - 1229
  • [32] Current relaxation analysis in AlGaN/GaN high electron mobility transistors
    Polyakov, Alexander Y.
    Smirnov, N. B.
    Shchemerov, Ivan V.
    Lee, In-Hwan
    Jang, Taehoon
    Dorofeev, Alexey A.
    Gladysheva, Nadezhda B.
    Kondratyev, Eugene S.
    Turusova, Yulia A.
    Zinovyev, Roman A.
    Turutin, A. V.
    Ren, Fan
    Pearton, S. J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (01):
  • [33] Impedance Characterization of AlGaN/GaN/Si High Electron Mobility Transistors
    H. Mosbahi
    M. Gassoumi
    M. A. Zaidi
    Silicon, 2022, 14 : 3899 - 3903
  • [34] Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors
    Baron, N.
    Leroux, M.
    Zeggaoui, N.
    Corfdir, P.
    Semond, F.
    Bougrioua, Z.
    Azize, M.
    Cordier, Y.
    Massies, J.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S715 - S718
  • [35] Thermal Storage of AlGaN/GaN High-Electron-Mobility Transistors
    Zhao, Miao
    Wang, Xinhua
    Liu, Xinyu
    Huang, Jun
    Zheng, Yingkui
    Wei, Ke
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (03) : 360 - 365
  • [36] Neutron irradiation effects on AlGaN/GaN high electron mobility transistors
    Lu Ling
    Zhang Jin-Cheng
    Xue Jun-Shuai
    Ma Xiao-Hua
    Zhang Wei
    Bi Zhi-Wei
    Zhang Yue
    Hao Yue
    CHINESE PHYSICS B, 2012, 21 (03)
  • [37] Measurement of frequency dispersion of AlGaN/GaN high electron mobility transistors
    Mizutani, T., 1600, Japan Society of Applied Physics (42):
  • [38] Measurement of frequency dispersion of AlGaN/GaN high electron mobility transistors
    Mizutani, T
    Makihara, H
    Akita, M
    Ohno, Y
    Kishimoto, S
    Maezawa, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (2A): : 424 - 425
  • [39] Detection of halide ions with AlGaN/GaN high electron mobility transistors
    Kang, BS
    Ren, F
    Kang, MC
    Lofton, C
    Tan, WH
    Pearton, SJ
    Dabiran, A
    Osinsky, A
    Chow, PP
    APPLIED PHYSICS LETTERS, 2005, 86 (17) : 1 - 3
  • [40] Impedance Characterization of AlGaN/GaN/Si High Electron Mobility Transistors
    Mosbahi, H.
    Gassoumi, M.
    Zaidi, M. A.
    SILICON, 2022, 14 (08) : 3899 - 3903
12345