Use of ultrafine-dispersed nanodiamond for selective deposition of boron-doped diamond films

被引:0
作者
V. V. Dvorkin
N. N. Dzbanovskii
A. F. Pal’
N. V. Suetin
A. Yu. Yur’ev
P. Ya. Detkov
机构
[1] Moscow State University,Skobel’tsyn Research Institute of Nuclear Physics
[2] Troitsk Institute for Innovation and Thermonuclear Research,Russian Federal Nuclear Center
[3] All-Russia Zababakhin Research Institute of Technical Physics,undefined
来源
Physics of the Solid State | 2004年 / 46卷
关键词
Silicon; Microwave; Uniform Distribution; Silicon Substrate; Diamond Film;
D O I
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中图分类号
学科分类号
摘要
A suspension of ultrafine-dispersed nanodiamond was used for introducing (in particular, selectively) high-density centers of diamond nucleation on various substrates. High-quality doped diamond films to be used as electrochemistry electrodes were deposited from the gas phase in a microwave discharge on certain substrates treated using ultrafine-dispersed nanodiamond. A uniform distribution of nucleation centers with concentrations greater than 1010 cm-2 on silicon substrates was obtained. Electrochemical current-potential curves were measured for continuous films. Diamond meshes of different transparency were grown using selective nucleation. Successful production of high-quality doped diamond meshes gives grounds to consider them the most promising electrodes for use in electrochemistry.
引用
收藏
页码:729 / 732
页数:3
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