Use of ultrafine-dispersed nanodiamond for selective deposition of boron-doped diamond films

被引：0
作者：
V. V. Dvorkin
N. N. Dzbanovskii
A. F. Pal’
N. V. Suetin
A. Yu. Yur’ev
P. Ya. Detkov
机构：
[1] Moscow State University,Skobel’tsyn Research Institute of Nuclear Physics
[2] Troitsk Institute for Innovation and Thermonuclear Research,Russian Federal Nuclear Center
[3] All-Russia Zababakhin Research Institute of Technical Physics,undefined
来源：
Physics of the Solid State | 2004年 / 46卷
关键词：
Silicon; Microwave; Uniform Distribution; Silicon Substrate; Diamond Film;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A suspension of ultrafine-dispersed nanodiamond was used for introducing (in particular, selectively) high-density centers of diamond nucleation on various substrates. High-quality doped diamond films to be used as electrochemistry electrodes were deposited from the gas phase in a microwave discharge on certain substrates treated using ultrafine-dispersed nanodiamond. A uniform distribution of nucleation centers with concentrations greater than 1010 cm-2 on silicon substrates was obtained. Electrochemical current-potential curves were measured for continuous films. Diamond meshes of different transparency were grown using selective nucleation. Successful production of high-quality doped diamond meshes gives grounds to consider them the most promising electrodes for use in electrochemistry.
引用
收藏
页码：729 / 732
页数：3
相关论文
共 50 条
  • [1] Use of ultrafine-dispersed nanodiamond for selective deposition of boron-doped diamond films
    Dvorkin, VV
    Dzbanovskii, NN
    Pal', AF
    Suetin, NV
    Yur'ev, AY
    Detkov, PY
    PHYSICS OF THE SOLID STATE, 2004, 46 (04) : 729 - 732
  • [2] Intercalation of ultrafine-dispersed diamond in aqueous suspensions
    A. E. Aleksenskii
    M. A. Yagovkina
    A. Ya. Vul’
    Physics of the Solid State, 2004, 46 : 685 - 686
  • [3] Effect of deposition temperature on properties of boron-doped diamond films on tungsten carbide substrate
    Shen, Bin
    Chen, Su-lin
    Sun, Fang-hong
    TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2018, 28 (04) : 729 - 738
  • [4] The superconductivity in boron-doped polycrystalline diamond thick films
    Wang, Z. L.
    Luo, Q.
    Liu, L. W.
    Li, C. Y.
    Yang, H. X.
    Yang, H. F.
    Li, J. J.
    Lu, X. Y.
    Jin, Z. S.
    Lu, L.
    Gu, C. Z.
    DIAMOND AND RELATED MATERIALS, 2006, 15 (4-8) : 659 - 663
  • [5] Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition
    Liu Dan
    Gou Li
    Ran Junguo
    Zhu Hong
    Zhang Xiang
    PLASMA SCIENCE & TECHNOLOGY, 2015, 17 (07) : 574 - 578
  • [6] Deposition and characterization of boron-doped HFCVD diamond films on Ti, SiC, Si and Ta substrates
    Wang, Xinchang
    Shen, Bin
    Sun, Fanghong
    ADVANCED MATERIALS AND PROCESS TECHNOLOGY, PTS 1-3, 2012, 217-219 : 1062 - 1067
  • [7] Boron-Doped Diamond Films Deposited on Silicon Substrates by MPCVD
    辛吉升
    莫要武
    夏义本
    居建华
    王鸿
    Advances in Manufacturing, 1997, (02) : 159 - 162
  • [8] Surface Nanostructuring of Boron-Doped Diamond Films and Their Electrochemical Performance
    Zou, Y. S.
    Yang, Y.
    Zhou, Y. L.
    Li, Z. X.
    Yang, H.
    He, B.
    Bello, I.
    Zhang, W. J.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (09) : 7914 - 7919
  • [9] Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition
    Kawano, Akihiro
    Ishiwata, Hitoshi
    Iriyama, Shingo
    Okada, Ryosuke
    Yamaguchi, Takahide
    Takano, Yoshihiko
    Kawarada, Hiroshi
    PHYSICAL REVIEW B, 2010, 82 (08):
  • [10] Electrochemistry at boron-doped diamond films grown on graphite substrates: redox-, adsorption and deposition processes
    Goeting, CH
    Jones, F
    Foord, JS
    Eklund, JC
    Marken, F
    Compton, RG
    Chalker, PR
    Johnston, C
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1998, 442 (1-2): : 207 - 216
12345