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High-power LEDs based on InGaAsP/InP heterostructures
被引:0
作者:
V. Rakovics
A. N. Imenkov
V. V. Sherstnev
O. Yu. Serebrennikova
N. D. Il’inskaya
Yu. P. Yakovlev
机构:
[1] Hungarian Academy of Sciences,Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences
[2] Russian Academy of Sciences,Ioffe Physical
来源:
Semiconductors
|
2014年
/
48卷
关键词:
Light Emit Diode;
Radiative Recombination;
Directivity Pattern;
External Quantum Efficiency;
Auger Recombination;
D O I:
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学科分类号:
摘要:
High-power light-emitting diodes (LEDs) with mesa diameters of 100, 200, and 300 μm are developed on the basis of InGaAsP/InP heterostructures. The mesas are close in shape to a truncated cone with a generatrix inclination angle of ∼45° in the vicinity of the active region of the LED, with a ring etched around the mesa serving as a reflector. The emission spectra and directivity patterns of these LEDs are studied in a wide range of current densities and it is shown that radiative recombination is dominant to a current density of ∼5000 A/cm2, which makes these structures promising for the development of high-power LEDs. An emission power of ∼14 mW is obtained in the continuous-wave mode (I = 0.2 A, λ = 1.1 μm), and that of 77 mW, in the pulsed mode (I = 2 A, λ = 1.1 μm), which corresponds to external quantum efficiencies of 6.2 and 3.4%, respectively.
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页码:1653 / 1656
页数:3
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