High-power LEDs based on InGaAsP/InP heterostructures

被引：0

作者：

V. Rakovics

A. N. Imenkov

V. V. Sherstnev

O. Yu. Serebrennikova

N. D. Il’inskaya

Yu. P. Yakovlev

机构：

[1] Hungarian Academy of Sciences,Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences

[2] Russian Academy of Sciences,Ioffe Physical

来源：

Semiconductors | 2014年 / 48卷

关键词：

Light Emit Diode; Radiative Recombination; Directivity Pattern; External Quantum Efficiency; Auger Recombination;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

High-power light-emitting diodes (LEDs) with mesa diameters of 100, 200, and 300 μm are developed on the basis of InGaAsP/InP heterostructures. The mesas are close in shape to a truncated cone with a generatrix inclination angle of ∼45° in the vicinity of the active region of the LED, with a ring etched around the mesa serving as a reflector. The emission spectra and directivity patterns of these LEDs are studied in a wide range of current densities and it is shown that radiative recombination is dominant to a current density of ∼5000 A/cm2, which makes these structures promising for the development of high-power LEDs. An emission power of ∼14 mW is obtained in the continuous-wave mode (I = 0.2 A, λ = 1.1 μm), and that of 77 mW, in the pulsed mode (I = 2 A, λ = 1.1 μm), which corresponds to external quantum efficiencies of 6.2 and 3.4%, respectively.

引用

页码：1653 / 1656

页数：3

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