Anisotropy and temperature dependences of thermal conductivity for silicon nanowires

被引：0
|
作者：
Kuleyev I.G. [1 ]
Kuleyev I.I. [1 ]
Bakharev S.M. [1 ]
机构：
[1] Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg
来源：
Kuleyev, I.G. (kuleev@imp.uran.ru) | 1600年 / Allerton Press Incorporation卷 / 78期
关键词：
Thermal Conductivity; Silicon Nanowires; Phonon Transport; Nanowire Diameter; Longitudinal Phonon;
D O I：
10.3103/S1062873814090147
中图分类号：
学科分类号：
摘要：
The anisotropy and temperature dependences of thermal conductivity for silicon nanowires with diameters higher than 50 nm is investigated using the Callaway three-mode model. Contributions to the thermal conductivity from the boundary and bulk mechanisms of phonon scattering are calculated at room temperature. The relationship between the thermal conductivity and nanowire diameter is analyzed in symmetrical directions and at room temperature. © 2014, Allerton Press, Inc.
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页码：905 / 907
页数：2
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