Induced transition from Schottky to ohmic contact in In/n-type Si owing to (NH4)2Sx treatment

被引：0
|
作者：
Xiu-Yu Lin
Hsing-Cheng Chang
Bo-Lin Huang
Yow-Jon Lin
机构：
[1] National Changhua University of Education,Institute of Photonics
[2] Feng Chia University,Department of Automatic Control Engineering
[3] National Changhua University of Education,Department of Physics
来源：
Indian Journal of Physics | 2022年 / 96卷
关键词：
Semiconductor surfaces; Elemental semiconductors; Contact resistance; Electrical properties; Work functions;
D O I：
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中图分类号：
学科分类号：
摘要：
Indium metal is deposited on n-type Si (n-Si) samples with/without (NH4)2Sx treatment in order to experimentally study the mechanism for the transition from Schottky to ohmic contact. Indium metal that is deposited on a n-Si sample that is subject to (NH4)2Sx treatment shows ohmic behavior but indium metal that is deposited on a n-Si sample that is not subject to (NH4)2Sx treatment exhibits Schottky behavior. Using the transmission line method, the specific contact resistance of the In/(NH4)2Sx treated n-Si structure is calculated to be 283.3 mΩ cm2. Experimental identification confirms that the transformation to conduction behavior occurs because of the combined effect of broken Si–O bonds (i.e., the removal of the native oxide) and the formation of Si–Sx2− bonds at the Si surface, which results in a transition from upward to downward surface band bending for n-Si.
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页码：3137 / 3141
页数：4
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