High-frequency admittance of a thin circular semiconductor wire

被引：0

作者：

Kuznetsova I.A. ^{[1
]}

Yushkanov A.A. ^{[2
]}

Khadchukaev R.R. ^{[1
]}

机构：

[1] Yaroslavl State University, Yaroslavl

[2] Moscow State Region University, Moscow

来源：

Russian Microelectronics | 2008年 / 37卷 / 4期

关键词：

85.40Xx;

D O I：

10.1134/S1063739708040045

中图分类号：

学科分类号：

摘要：

The high-frequency admittance of a linear thin semiconductor wire with circular cross section is investigated within classical transport theory. No assumption is made concerning the ratio of the wire radius to the carrier mean free path. Diffuse reflection of carriers from the surface is considered. The admittance is calculated in the case of a nondegenerate electron gas. © 2008 MAIK Nauka.

引用

页码：238 / 244

页数：6

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