High-frequency admittance of a thin circular semiconductor wire

被引:0
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作者
Kuznetsova I.A. [1 ]
Yushkanov A.A. [2 ]
Khadchukaev R.R. [1 ]
机构
[1] Yaroslavl State University, Yaroslavl
[2] Moscow State Region University, Moscow
关键词
85.40Xx;
D O I
10.1134/S1063739708040045
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摘要
The high-frequency admittance of a linear thin semiconductor wire with circular cross section is investigated within classical transport theory. No assumption is made concerning the ratio of the wire radius to the carrier mean free path. Diffuse reflection of carriers from the surface is considered. The admittance is calculated in the case of a nondegenerate electron gas. © 2008 MAIK Nauka.
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页码:238 / 244
页数:6
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