The microstructure of vertically coupled quantum dots ensembles by EXAFS spectroscopy

被引：0

作者：

S. B. Erenburg

S. V. Trubina

N. V. Bausk

A. I. Nikiforov

A. V. Dvurechenskii

V. G. Mansurov

K. S. Zhuravlev

S. G. Nikitenko

机构：

[1] Russian Academy of Sciences,Nikolaev Institute of Inorganic Chemistry, Siberian Branch

[2] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch

[3] DUBBLE-CRG & ESRF,undefined

来源：

Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2011年 / 5卷

关键词：

Neutron Technique; Effective Thickness; Interfacial Diffusion; Waller Factor; AlAs Layer;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The microstructure of samples containing Ge/Si, GaN/AlN, and InAs/AlAs (Ge, GaN, and InAs quantum dots (QDs) in the Si, AlN, and AlAs matrices, respectively) multilayer heterostructures has been investigated by EXAFS spectroscopy. The effect of the effective thicknesses of Si (or AlN) barrier layers, number of Ge (or GaN) layers in a sandwich, and annealing temperature on the size and shape of Ge (or GaN) clusters, interfacial diffusion in these systems, and formation of three-dimensional ordered ensembles of QDs has been established.

引用

页码：856 / 862

页数：6

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