Transcriptional analysis between two wheat near-isogenic lines contrasting in aluminum tolerance under aluminum stress

被引:0
|
作者
Peiguo Guo
Guihua Bai
Brett Carver
Ronghua Li
Amy Bernardo
Michael Baum
机构
[1] Guangzhou University,College of Life Science
[2] Kansas State University,USDA
[3] Oklahoma State University,ARS—Plant Science and Entomology Research Unit, 4008 Throckmorton Hall
[4] International Center for Agricultural Research in the Dry Areas (ICARDA),Department of Plant and Soil Sciences
来源
Molecular Genetics and Genomics | 2007年 / 277卷
关键词
L.; Aluminum tolerance; Microarray; Transcription profiles;
D O I
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学科分类号
摘要
To understand the mechanisms of aluminum (Al) tolerance in wheat (Triticum aestivum L.), suppression subtractive hybridization (SSH) libraries were constructed from Al-stressed roots of two near-isogenic lines (NILs). A total of 1,065 putative genes from the SSH libraries was printed in a cDNA array. Relative expression levels of those genes were compared between two NILs at seven time points of Al stress from 15 min to 7 days. Fifty-seven genes were differentially expressed for at least one time point of Al treatment. Among them, 28 genes including genes for aluminum-activated malate transporter-1, ent-kaurenoic acid oxidase-1, β-glucosidase, lectin, histidine kinase, and phospoenolpyruvate carboxylase showed more abundant transcripts in Chisholm-T and therefore may facilitate Al tolerance. In addition, a set of genes related to senescence and starvation of nitrogen, iron, and sulfur, such as copper chaperone homolog, nitrogen regulatory gene-2, yellow stripe-1, and methylthioribose kinase, was highly expressed in Chisholm-S under Al stress. The results suggest that Al tolerance may be co-regulated by multiple genes with diverse functions, and those genes abundantly expressed in Chisholm-T may play important roles in enhancing Al tolerance. The down-regulated genes in Chisholm-S may repress root growth and restrict uptake of essential nutrient elements, and lead to root senescence.
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页码:1 / 12
页数:11
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