Preparation and characteristics of Cu/Al2O3/MgF2/Au tunnel junction

被引：0

作者：

Maoxiang Wang

Wei Yu

Jianhua Yu

Youwen Zhang

Xuping Zhang

机构：

[1] Nanjing University,School of Management and Engineering

[2] Yangzhou University,Information Engineering College

[3] Nanjing RuiHu Seience and Technology Co.,Nanjing R & D Center

[4] Ltd.,undefined

[5] ZTE Corpration,undefined

来源：

Journal of Wuhan University of Technology-Mater. Sci. Ed. | 2009年 / 24卷

关键词：

double-barrier junction; light emission; negative resistance phenomenon; electron resonant tunneling;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The fabrication process of Cu/Al2O3/MgF2/Au double-barrier metal/insulator/metal junction (DMIMJ) was introduced, and more stable light emission from this junction was successfully observed. The light emission physical mechanism of the junction was discussed. Results show that light emission spectrum of this structure locates at wavelength of 250–700 nm with two peaks at around 460 nm and 640 nm, which moves towards shorter wavelength region in comparison with that of the Al/Al2O3/Au junction. The light emission efficiency of this junction ranges from 0.7×10−5–2.0×10−5, which is 1 to 2 orders higher than that of the single-barrier Al/Al2O3/Au junction. The improved properties of this structure should be due to the electrons resonant tunneling effect in the double-barrier.

引用

页码：721 / 724

页数：3

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