A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD

被引：0
|
作者：
D. A. Vinokurov
M. A. Ladugin
A. A. Marmalyuk
A. A. Padalitsa
N. A. Pikhtin
V. A. Simakov
A. V. Sukharev
N. V. Fetisova
V. V. Shamakhov
I. S. Tarasov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] Federal State Unitary Enterprise,Stel’makh Polyus Research Institute
来源：
Semiconductors | 2009年 / 43卷
关键词：
85.30.Mn; 73.40.Gk; 73.40.Kp; 81.15.Ch;
D O I：
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中图分类号：
学科分类号：
摘要：
Technological modes in which high-efficiency GaAs: Si/GaAs: C tunneling structures can be fabricated by MOS-hydride epitaxy have been determined. It was demonstrated that use of C and Si dopants makes it possible to obtain a p-n junction with low diffusion spreading of dopant profiles. It was shown that fabrication of high-efficiency tunnel diodes requires that GaAs layers should be doped with acceptor and donor impurities to a level of ∼9 × 1019 cm−3. Tunnel diodes were fabricated using the tunnel structures and their current-voltage characteristics were studied. Peak current densities Jp ≈ 1.53 kA cm−2 and a differential resistance R ≈ 30 mΩ under a reverse bias were obtained in the tunnel diodes.
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页码：1213 / 1216
页数：3
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