Synthetic Semiconductor Diamond Electrodes: Comparison of Electrochemical Impedance at the Growth and Nucleation Surfaces of a Coarse-Grained Polycrystalline Film

被引：0

作者：

Yu. V. Pleskov

M. D. Krotova

Yu. E. Evstefeeva

V. G. Ral'chenko

I. I. Vlasov

A. V. Khomich

机构：

[1] Russian Academy of Sciences,Frumkin Institute of Electrochemistry

[2] Russian Academy of Sciences,Institute of General Physics

[3] Institute of Radio Engineering and Electronics,undefined

来源：

Russian Journal of Electrochemistry | 2001年 / 37卷

关键词：

Physical Chemistry; Crystal Structure; Boron; Film Growth; Perfect Crystal;

D O I：

暂无

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学科分类号：

摘要：

A comparative study of the impedance of the growth and nucleation surfaces of a free-standing film of polycrystalline diamond deposited from RF-plasma and moderately doped with boron is performed. Using Mott–Schottky plots, the acceptor concentration is determined. It is shown that in the diamond bulk adjacent to the film growth side, which has more perfect crystal structure, this concentration is much lower than that near the nucleation side, where the film consists of submicron-sized grains.

引用

页码：1123 / 1127

页数：4