An embedded β-Ga2O3 layer in a SOI-LDMOS to improve breakdown voltage

In this work, we present a novel silicon-on-insulator (SOI) laterally diffused metal–oxide–semiconductor (LDMOS) using β-Ga2O3 material (β-SOI-LDMOS) as a wide-bandgap material for enhancing breakdown voltage. Because of the embedded gallium oxide in the drift side, the distribution of the electric field of the β-SOI-LDMOS is altered, and the depletion region changes. The properties of β-SOI-LDMOS including breakdown voltage (BV), ON-resistance (RON), figure of merit, and floating body and self-heating effects are compared with a conventional SOI-LDMOS (C-SOI-LDMOS). The primary goal in this work is to use an ultra-wide-bandgap material between the gate and drain area on the critical side. The proposed structure shows promising results compared to the C-SOI-LDMOS, and the BV of the β-SOI-LDMOS is increased to 1202 V as compared with 73 V for the conventional LDMOS structure. The proposed β-Ga2O3 MOSFET exhibits saturation drain current of 37 mA/mm, with low specific RON of 4.7 mΩ cm2 and a figure of merit (VBR2/RON) of 30.7 MW/cm2.