Low temperature co-fired AlN multilayer substrates

被引:0
|
作者
WEI-GUO MIAO
YIN WU
HE-PING ZHOU
机构
[1] Tsinghua University,Ceramics Division, Department of Materials Science and Engineering
来源
Journal of Materials Science: Materials in Electronics | 1997年 / 8卷
关键词
Tungsten; High Thermal Conductivity; Residual Carbon; Additive System; Polyvinyl Butyral;
D O I
暂无
中图分类号
学科分类号
摘要
A process for low temperature co-fired AlN multilayer substrates is introduced. Some key factors about this technology are delineated and discussed. A two-step burnout process may solve the contradiction between tungsten oxidation and carbon removal. Sintering with additives appears to improve densification at low temperature. DyN was found as a second phase in AlN ceramics, which suggests that Dy2O3 efficiently removes oxygen from the AlN lattice. The microstructure of AlN ceramics is ideal for achieving high thermal conductivity. Analysis of the AlN-W interface showed there were no second phases, but there was probably an intricate interlocking structure between the grains of tungsten and AlN. Co-firing at 1650°C for 4 h produced an AlN multilayer substrate with a thermal conductivity of up to 130 W m−1 K−1.
引用
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页码:233 / 238
页数:5
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