Statistical simulation for process design and optimization in IC manufacture

被引：1
作者：
A. A. Kouleshoff
V. S. Malyshev
V. V. Nelayev
V. R. Stempitsky
机构：
[1] Belarussian State University of Information Science, Radio, and Electronics, Minsk
[2] Belarussian State University, Minsk
[3] Belmikrosistemy, NPO Integral
来源：
Russian Microelectronics | 2003年 / 32卷 / 1期
关键词：
Process Design; Measured Data; Statistical Simulation; CMOS Technology; Circuit Parameter;
D O I：
10.1023/A:1021861819656
中图分类号：
学科分类号：
摘要：
An approach to multidimensional statistical simulation for process design and optimization in IC manufacture is proposed. It essentially takes account of the sensitivity of circuit parameters to the random variability of process parameters. The approach is implemented in an algorithm and software for process statistical analysis and optimization. The response-surface methodology and pattern-recognition techniques are used for the approximation of relations between process and circuit parameters. The capabilities of the approach are evaluated from simulated and measured data on the fabrication of transistors by routine bipolar and CMOS technologies.
引用
收藏
页码：39 / 50
页数：11
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