Optimization of III/V binary growth with RHEED in MOMBE

被引：0

作者：

C. Ungermanns

M. v. d. Ahe

R. Carius

A. Förster

M. Hollfelder

H. Hardtdegen

M. Matt

K. Nicoll

R. Schmidt

B. Setzer

H. Lüth

机构：

[1] Institute of Thin Film and Ion Technology,

[2] Research Center Jülich,undefined

[3] D-52425 Jülich,undefined

[4] Germany ,undefined

来源：

Fresenius' Journal of Analytical Chemistry | 1997年 / 358卷

关键词：

Reflection; Energy Electron; Electron Diffraction; Molecular Beam Epitaxy; Growth Parameter;

D O I：

暂无

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学科分类号：

摘要：

In this paper we report on the optimization of homoepitaxial InAs and InP growth in MOMBE (metalorganic molecular beam epitaxy). A correlation is made between good optical quality material and the observation of RHEED (reflection high energy electron diffraction) intensity oscillations. It will be shown, that in situ RHEED oscillations can be used to determine a growth parameter window in MOMBE.

引用

页码：101 / 104

页数：3