Electrical and Optical Characterization of Electron Beam Evaporated Indium Antimonide Thin Films

被引：0

作者：

A. K. Rahul

R. S. N. Verma

S. R. Tripathi

机构：

[1] Dr. R. M. L. Avadh University,Department of Physics & Electronics

来源：

National Academy Science Letters | 2012年 / 35卷

关键词：

InSb thin films; Hall effect; Carrier concentration; Mobility; Direct band gap;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Thin films of non-stoichiometric indium antimonide (In0.66Sb0.34) of different thickness, 300–1,300 nm, deposited by electron beam evaporation technique on glass substrates have been found to have zincblende structure and of n-type semiconductor as determined by Hall measurements. All the electrical parameters i.e. Hall mobility (μH), carrier concentration (n), resistivity (ρ) and band gap (Eg) have been found to be thickness dependent. Suitable explanations are given in the paper.

引用

页码：367 / 372

页数：5