The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

被引：0
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作者：
E. A. Emelyanov
A. V. Vasev
B. R. Semyagin
M. Yu. Yesin
I. D. Loshkarev
A. P. Vasilenko
M. A. Putyato
M. O. Petrushkov
V. V. Preobrazhenskii
机构：
[1] Rzhanov Institute of Semiconductor Physics,
[2] Siberian Branch,undefined
[3] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2019年 / 53卷
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页码：503 / 510
页数：7
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