Fatigue damage evolution in silicon films for micromechanical applications

被引：24

作者：

P. Shrotriya

S. Allameh

S. Brown

Z. Suo

W. O. Soboyejo

机构：

[1] Princeton Materials Institute, Department of Mech./Aerospace Eng., Princeton University, Princeton

[2] Exponent Failure Associates, Natick

来源：

Experimental Mechanics | 2003年 / 43卷 / 3期

基金：

美国国家科学基金会;

关键词：

Crack growth; Fatigue; MEMS; Polysilicon; Surface topography evolution;

D O I：

10.1007/BF02410527

中图分类号：

学科分类号：

摘要：

In this paper we examine the conditions for surface topography evolution and crack growth/fracture during the cyclic actuation of polysilicon microelectromechanical systems (MEMS) structures. The surface topography evolution that occurs during cyclic fatigue is shown to be stressassisted and may be predicted by linear perturbation analyses. The conditions for crack growth (due to pre-existing or nucleated cracks) are also examined within the framework of linear elastic fracture mechanics. Within this framework, we consider pre-existing cracks in the topical SiO2 layer that forms on the Si substrate in the absence of passivation. The thickening of the SiO2 that is normally observed during cyclic actuation of Si MEMS structures is shown to increase the possibility of stable crack growth by stress corrosion cracking prior to the onset of unstable crack growth in the SiO2 and Si layers. Finally, the implications of the results are discussed for the prediction of fatigue damage in silicon MEMS structures.

引用

页码：289 / 302

页数：13

共 29 条

[1]

Madou M., Fundamentals of Microfabrication, (2002)

[2]

Roming A.D., Opportunities and challenges in MEMS commercialization, Vacuum Technology and Coating, (2001)

[3]

Brown S.B., Van Arsdell W., Muhlstein C.L., Materials reliability in MEMS devices, International Solid State Sensors and Actuators Conference (Transducers, '97), (1997)

[4]

Jones P.T., Johnson G.C., Howe R.T., Fracture strength of polycrystalline silicon, Microelectromechanical Structures for Materials Research-Symposium N, (1998)

[5]

La Van D., Buchheit T.E., Testing of critical features of polysilicon MEMS, Symposium MM, Materials Science of Microelectromechanical Systems (MEMS) Devices II, (1999)

[6]

Brown S.B., Arsdell W.V., Muhlstein C.L., Materials reliability in MEMS devices, Transducer 97, International Conference on Solid-State Sensors and Actuators, (1997)

[7]

Kahn H., Ballarini R.L., Mullen R., Heuer A.H., Electrostatically actuated failure of microfabricated polysilicon fracture mechanics specimens, Proc. Roy. Soc., 455, pp. 3807-3823, (1999)

[8]

Kapels H., Aigner R., Bider J., Fracture strength and fatigue of polysilicon determined by a novel thermal actuator [MEMS], 29th European Solid-State Device Research Conference, (1999)

[9]

Muhlstein C.L., Brown S., Ritchie R.O., High cycle fatigue of polycrystalline silicon thin films in laboratory air, Materials Science of Microelectromechanical System (MEMS) Devices III, (2000)

[10]

Muhlstein C.L., Brown S., Ritchie R.O., High cycle fatigue of single crystal silicon thin film, J. Microelectromech. Syst., 10, pp. 593-600, (2001)

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