Silicon switching structures with fluorides of rare-earth elements

被引：0

作者：

V. A. Rozhkov

M. B. Shalimova

机构：

[1] Samara State University,

来源：

Technical Physics Letters | 1998年 / 24卷

关键词：

Silicon; Fluoride; Kinetic Characteristic; Switching Structure; Photoelectric Characteristic;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Results are presented of an investigation of the photoelectric characteristics of silicon metal-insulator-metal switching structures with a thin-film insulating layer of rare-earth fluoride. Studies of the steady-state and kinetic characteristics of the photocurrent revealed that in the low-resistivity state the metal-tunnel insulator-semiconductor model can be applied to the structures.

引用

页码：663 / 664

页数：1

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