Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers

被引:0
作者
M. W. Liang
T. E. Hsieh
S. Y. Chang
T. H. Chuang
机构
[1] National Chiao-Tung University,Department of Materials Science and Engineering
[2] National Taiwan University,Institute of Materials Science and Engineering
来源
Journal of Electronic Materials | 2003年 / 32卷
关键词
Diffusion soldering; die attachment; intermetallic compounds; kinetics analysis; bonding strength;
D O I
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中图分类号
学科分类号
摘要
The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al2O3 were diffusion-soldered at temperatures between 250°C and 400°C by inserting a Sn thin-film interlayer. Experimental results showed that a double layer of intermetallic compounds (IMCs) η-(Cu0.99Au0.01)6Sn5/δ-(Au0.87Cu0.13)Sn was formed at the interface. Kinetics analyses revealed that the growth of intermetallics was diffusion-controlled. The activation energies as calculated from Arrhenius plots of the growth rate constants for (Cu0.99Au0.01)6Sn5 and (Au0.87Cu0.13)Sn are 16.9 kJ/mol and 53.7 kJ/mol, respectively. Finally, a satisfactory tensile strength of 132 kg/cm2 could be attained under the bonding condition of 300°C for 20 min.
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页码:952 / 956
页数:4
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