Mapping of residual stresses around an indentation in β-Si3N4 using Raman spectroscopy

被引：0
作者：
N Muraki
G Katagiri
V Sergo
G Pezzotti
T Nishida
机构：
[1] Toray Research Center,Materials Science Laboratory
[2] Inc.,Materials Engineering and Applied Chemistry Department
[3] University of Trieste,Department of Materials
[4] Kyoto Institute of Technology,undefined
来源：
Journal of Materials Science | 1997年 / 32卷
关键词：
Residual Stress; Silicon Nitride; Raman Band; Residual Stress Distribution; Indentation Centre;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The stress dependence of the Raman bands of silicon nitride (β-Si3N4) have been investigated and applied to indentation experiments. Seven high-frequency bands have been found to have linear and negative stress dependencies. On the other hand, low frequency bands (namely 183, 205 and 226 cm-1 bands) showed small positive correlations with the stress. The piezospectroscopic (PS) coefficients of all the observed Raman bands have been determined. As an application, one of the PS coefficients has been used to determine the stress distribution around a triangular indentation.
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页码：5419 / 5423
页数：4
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