Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN

被引：0

作者：

B. Boudart

S. Trassaert

X. Wallart

J. C. Pesant

O. Yaradou

D. Théron

Y. Crosnier

H. Lahreche

F. Omnes

机构：

[1] Université des Sciences et Technologies de Lille,Institut d’Electronique et de Microélectronique du Nord, U.M.R.

[2] Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications,C.N.R.S. 8520, Département Hyperfréquences et Semiconducteurs

[3] C.N.R.S.,undefined

[4] Parc de Sophia Antipolis,undefined

来源：

Journal of Electronic Materials | 2000年 / 29卷

关键词：

GaN; ohmic contacts; XPS; AFM; aging tests;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report a comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts in terms of contact resistivity, thermal stability, depth profile, and surface morphology. The metals were deposited by conventional electron-beam evaporation, and then annealed at 900°C for 30 s in a N2 atmosphere. The lowest value for the specific contact resistivity was obtained using Ti/Al/Ni/Au metallization. Ti/Al/Ni/Au contacts showed no increase in contact resistivity after aging for five days at 600°C in an air atmosphere. Examination of the surface morphology using atomic force microscopy revealed that the surface roughness was clearly better in the case of Ti/Al/Ni/Au contacts. X-ray photoelectron spectroscopy was also employed and gave primary results of Ti/Al/Ni/Au contact formation.

引用

页码：603 / 606

页数：3

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