Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN

被引：0
作者：
B. Boudart
S. Trassaert
X. Wallart
J. C. Pesant
O. Yaradou
D. Théron
Y. Crosnier
H. Lahreche
F. Omnes
机构：
[1] Université des Sciences et Technologies de Lille,Institut d’Electronique et de Microélectronique du Nord, U.M.R.
[2] Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications,C.N.R.S. 8520, Département Hyperfréquences et Semiconducteurs
[3] C.N.R.S.,undefined
[4] Parc de Sophia Antipolis,undefined
来源：
Journal of Electronic Materials | 2000年 / 29卷
关键词：
GaN; ohmic contacts; XPS; AFM; aging tests;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report a comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts in terms of contact resistivity, thermal stability, depth profile, and surface morphology. The metals were deposited by conventional electron-beam evaporation, and then annealed at 900°C for 30 s in a N2 atmosphere. The lowest value for the specific contact resistivity was obtained using Ti/Al/Ni/Au metallization. Ti/Al/Ni/Au contacts showed no increase in contact resistivity after aging for five days at 600°C in an air atmosphere. Examination of the surface morphology using atomic force microscopy revealed that the surface roughness was clearly better in the case of Ti/Al/Ni/Au contacts. X-ray photoelectron spectroscopy was also employed and gave primary results of Ti/Al/Ni/Au contact formation.
引用
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页码：603 / 606
页数：3
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