Emission from rare-earth centers in (ZnTe:Yb):O/GaAs

被引：0

作者：

V. M. Konnov

N. N. Loiko

Yu. G. Sadof’ev

A. S. Trushin

E. I. Makhov

机构：

[1] Russian Academy of Sciences,Lebedev Physical Institute

来源：

Semiconductors | 2002年 / 36卷

关键词：

GaAs; Magnetic Material; Electromagnetism; Crystal Field; ZnTe;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Layers of Yb-doped ZnTe were grown by molecular-beam epitaxy, and the photoluminescence of ZnTe:Yb structures was studied. It was found that additional doping with O should be performed to activate emission from Yb ions. The necessary conditions for intense emission from Yb3+ ions were determined. Stark splitting of levels of Yb3+ ions in the crystal field was measured experimentally.

引用

页码：1215 / 1220

页数：5