Two-frequency laser with distributed feedback formed by a space charge wave

The regimes of amplification and generation of optical TE waves arising on a grating formed by a space charge wave (SCW) in a plane optical waveguide based on an n-GaAs semiconductor are considered. For the perturbed n-GaAs waveguide, the reflectance and transmittance of TE modes with the same indices (m = n = 0) are calculated depending on the pump level and length of interaction between the optical and SCWs. It is shown that even with a relatively small depth of modulation of the dielectric constant (Δε≈10-5)\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$(\Delta \varepsilon \approx 10^{ - 5} )$$\end{document} under conditions of high optical pumping (with an amplification factor γ≈150\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\gamma \approx 150$$\end{document} cm−1) and corresponding SCW-optical interaction length, there is a possibility of not only amplification, but also generation of forward and backward optical modes at a wavelength of 10.6 μm. The results can be used to create tunable semiconductor laser generators based on the SCW-optical interaction and operating in the near and mid-IR range.