Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors

被引：0
|
作者：
E. V. Kalinina
G. N. Violina
I. P. Nikitina
E. V. Ivanova
V. V. Zabrodski
M. Z. Shvarts
S. A. Levina
A. V. Nikolaev
机构：
[1] Ioffe Institute,
[2] St. Petersburg State Electrotechnical University LETI,undefined
来源：
Semiconductors | 2020年 / 54卷
关键词：
silicon carbide; irradiation; protons; quantum efficiency; fluence;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：246 / 252
页数：6
相关论文
共 50 条
  • [1] Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors
    Kalinina, E. V.
    Violina, G. N.
    Nikitina, I. P.
    Ivanova, E. V.
    Zabrodski, V. V.
    Shvarts, M. Z.
    Levina, S. A.
    Nikolaev, A. V.
    SEMICONDUCTORS, 2020, 54 (02) : 246 - 252
  • [2] Antireflective subwavelength structures on 4H-SiC for UV photodetectors
    Hirabayashi, Y.
    Kaneko, S.
    Akiyama, K.
    Sakurazawa, K.
    Yasui, M.
    SENSORS, ACTUATORS, AND MICROSYSTEMS (GENERAL) - 216TH ECS MEETING, 2010, 25 (31): : 69 - 73
  • [3] Temperature dependence of the photoelectric conversion quantum efficiency of 4H-SiC Schottky UV photodetectors
    Blank, TV
    Goldberg, YA
    Kalinina, EV
    Konstantinov, OV
    Konstantinov, AO
    Hallén, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (08) : 710 - 715
  • [4] Effect of mesa structures on the responsivities of 4H-SiC photodetectors
    Liu, Xingfang
    Sun, Guosheng
    Li, Jinmin
    Zhao, Yongmei
    Ning, Jin
    Wang, Lei
    Zhao, Wanshun
    Luo, Muchang
    Li, Jiaye
    Zeng, Yiping
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (SUPPL.): : 579 - 582
  • [5] Optical properties of antireflective subwavelength structures on 4H-SiC for UV photodetectors
    Hirabayashi, Yasuo
    Kaneko, Satoru
    Akiyama, Kensuke
    Yasui, Manabu
    Sakurazawa, Keitaro
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 1073 - 1076
  • [6] Gettering Effect in Cr/4H-SiC UV Photodetectors under Ptoton Irradiation with E=15 MeV
    Nikitina, I. P.
    Kalinina, E. V.
    Zabrodski, V. V.
    TECHNICAL PHYSICS, 2023, 68 (12) : 683 - 688
  • [7] Selective 4H-SiC UV detectors
    Evgenia, Kalinina
    Konstantinov, O.
    Lebedev, A.
    Gol'dberg, Yu
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 1014 - 1017
  • [8] Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers
    E. V. Kalinina
    G. N. Violina
    I. P. Nikitina
    M. A. Yagovkina
    E. V. Ivanova
    V. V. Zabrodski
    Semiconductors, 2019, 53 : 844 - 849
  • [9] Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers
    Kalinina, E. V.
    Violina, G. N.
    Nikitina, I. P.
    Yagovkina, M. A.
    Ivanova, E. V.
    Zabrodski, V. V.
    SEMICONDUCTORS, 2019, 53 (06) : 844 - 849
  • [10] Irradiation with Argon Ions of Cr/4H-SiC Photodetectors
    Kalinina, E. V.
    Kudoyarov, M. F.
    Nikitina, I. P.
    Dementyeva, E. V.
    Zabrodskii, V. V.
    SEMICONDUCTORS, 2022, 56 (03) : 184 - 188
12345