Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection

被引：0

作者：

Zhenwu Shi

Lu Wang

Honglou Zhen

Wenxin Wang

Hong Chen

机构：

[1] Chinese Academy of Sciences,Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics

[2] Chinese Academy of Sciences,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics

来源：

Nanoscale Research Letters | / 8卷

关键词：

Molecular beam epitaxy; Quantum well infrared detector; InGaAs/AlGaAs quantum well;

D O I：

暂无

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学科分类号：

摘要：

InGaAs/AlGaAs multiple quantum wells used for 4.3 μm mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. In composition loss was observed and quantitatively studied by high-resolution X-ray diffraction technology. By this In composition loss effect, the energy band engineering on the photo-response wavelength is not easily achieved. A thin AlGaAs barrier grown at low temperature is used to suppress the In atom desorption, and this growth process was verified to be able to adjust the photo-response wavelength as designed by energy band engineering in the photocurrent spectrum.

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