Transformation of an unordered structural network in amorphous hydrogenated silicon films as a result of doping with boron

被引：0
作者：
M. M. Mezdrogina
A. V. Patsekin
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2000年 / 34卷
关键词：
Silicon; Boron; Gaseous Mixture; Structural Network; Magnetic Material;
D O I：
暂无
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学科分类号：
摘要：
The influence of the technological parameters of deposition, the purity and relative concentration of diborane, and the substrate temperature on electrical parameters of (a-Si:H):B films obtained by high-frequency decomposition of a gaseous mixture in a multielectrode system was studied. Simultaneous existence of the mechanisms for doping and modification in the case of introduction of boron from diborane in the course of deposition of (a-Si:H):B films is proposed.
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页码：348 / 352
页数：4
相关论文
共 31 条
[1]  
Le Comber P. G.(1980)undefined J. Non-Cryst. Solids 35–36 327-undefined
[2]  
Spear W. E.(1992)undefined Fiz. Tekh. Poluprovodn. (St. Petersburg) 26 66-undefined
[3]  
Golikova O. A.(1992)undefined Zh. Tekh. Fiz. 62 108-undefined
[4]  
Babakhodzhaev U. S.(1998)undefined Fiz. Tekh. Poluprovodn. (St. Petersburg) 32 555-undefined
[5]  
Dubro V. V.(1988)undefined Fiz. Tekh. Poluprovodn. (Leningrad) 22 161-undefined
[6]  
Mezdrogina M. M.(1990)undefined Neorg. Mater. 26 1809-undefined
[7]  
Golikova O. A.(1990)undefined Neorg. Mater. 26 455-undefined
[8]  
Kazanin M. M.(1990)undefined Fiz. Tekh. Poluprovodn. (Leningrad) 24 1143-undefined
[9]  
Mezdrogina M. M.(1981)undefined Phys. Rev. B: Condens. Matter 23 5322-undefined
[10]  
Abramov A. V.(1948)undefined J. Chem. Phys. 16 894-undefined
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