Electrical and Photoresponse Properties of Al/p-Si/Y1-xSrxMnO3/Al Heterojunction Photodiodes

被引：0
作者：
Denizhan Ozmen
Mesut Yalcin
Fahrettin Yakuphanoglu
机构：
[1] Firat University,Department of Physics, Faculty of Science
[2] Kilis 7 Aralik University,Vocational High School of Health Services
来源：
Silicon | 2020年 / 12卷
关键词：
Y; Sr; MnO; Photodiode; Ideality factor; Barrier height; Photoresponse;
D O I：
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中图分类号：
学科分类号：
摘要：
The electrical and photoresponse properties of Al/p-Si/Y1-xSrxMnO3/Al diodes were investigated by using current-voltage and transient photocurrent measurements. The average ideality factor and barrier height has been calculated as 4.2568 and 0.613 eV respectively. The calculated ideality factor for Al/p-Si/Y1-xSrxMnO3/Al diodes is higher than unity because of the interface states, native oxide layer and series resistance. Also, diodes have exhibited property of photosensitivity. These indicated that the fabrication of diodes can be used optoelectronic device applications.
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页码：883 / 891
页数：8
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