Diffusion of As ions and self-diffusion in silicon during implantation

被引：0

作者：

K. D. Demakov

V. A. Starostin

S. G. Shemardov

机构：

[1] Russian Research Centre Kurchatov Institute,

来源：

Technical Physics | 2002年 / 47卷

关键词：

Silicon; Experimental Data; Concentration Profile; Silicon Substrate; Ionic Diffusion;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Experimental concentration profiles of As ions in a silicon substrate at temperatures of 20, 600, and 1050°C and ion current of 40 µA/cm2, as well as at 1050°C and 10 µA/cm2, are presented. On the basis of our and previously published experimental data, the process of radiation-stimulated ionic diffusion and self-diffusion in silicon is simulated. A number of interesting dependences, which are discussed in the conclusion of this study, are obtained.

引用

页码：1333 / 1336

页数：3

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