Formation of atomically clean silicon surfaces in a low-energy low-pressure microwave plasma

被引：0
|
作者：
V. Ya. Shanygin
R. K. Yafarov
机构：
[1] Russian Academy of Sciences,Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch
来源：
Technical Physics | 2009年 / 54卷
关键词：
Silicon Surface; Etch Rate; Positive Bias; Microwave Plasma; Substrate Holder;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The influence of the regimes and chemical composition of the low-energy highly ionized ECR plasma of a low-pressure microwave gas discharge on the etch rate and nanomorphology of differently oriented single-crystal silicon surfaces is studied. Model mechanisms of the processes controlling the etch rate and etch quality of atomically clean silicon surfaces with a desired orientation are considered.
引用
收藏
页码：1795 / 1800
页数：5
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