Effect of doping and defects on the optoelectronic properties of ZrSe2 based on the first principle

被引：0
|
作者：
Shihang Sun
Lu Yang
Jinlin Bao
Yanshen Zhao
Xingbin Wei
Huaidong Liu
Junjie Ni
Xinying Tang
机构：
[1] Shenyang University of Technology,School of Architecture & Civil Engineering
来源：
Journal of Molecular Modeling | 2023年 / 29卷
关键词：
Vacancy defects; Doping; Electronic properties; Optical properties;
D O I：
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